This antenna together with the ALA1530LN are the only 1m dia. loops in production to use an ultra low noise JFET design. The loop has recently had a significant design change to improve LW/MW and SW reception. The antenna gain is increase by 9dB and the LW and MW signal to noise ratio s/n is up to 10dB higher, with an improved s/n on the HF bands. The LW and MW 3rd order IMD is now approx. 20dB lower when compared to the ALA1530 and the ALA1530S+. This being a combination of altering the gain distribution the lower IMD of the JFETs.
The new ALA1530LNP and the ALA1530LN are the second generation of this antenna to use 8 high gain JFETs in parallel push-pull with a Bipolar transistor cascode stage for extended bandwidth.
Optimum noise-less transformer feed-back dynamically drives the JFET source resistance to a fraction of an Ohm, resulting in a ultra low noise figure